Fiche du document
19 janvier 1993
- handle: 10670/1.0voenb
- Desjardins, P.; Izquierdo, R. et Meunier, M. (1993). « Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4 ». Journal of Applied Physics, 73(10), pp. 5216-5221.
Ce document est lié à :
http://archipel.uqam.ca/7791/
Ce document est lié à :
http://scitation.aip.org/content/aip/journal/jap/7 [...]
Sujets proches
Wolframium WolframCiter ce document
P. Desjardins et al., « Diode laser induced chemical vapor deposition of WSix on TiN from WF6 and SiH4 », UQAM Archipel : articles scientifiques, ID : 10670/1.0voenb
Métriques
Partage / Export
Résumé
Presents a study that reported the development of a compact and inexpensive laser direct writing system for the deposition of tungsten and tungsten silicides using a 1 W diode laser array emitting at 796 nm. Reason for the difficulty to introduce laser processing in a manufacturing environment; Problems related to the use of diode lasers; Characteristics of the lines obtained in both static and dynamic reactors.