Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy
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18 décembre 1989
- handle: 10670/1.2yp9p4
- Beaudoin, M.; Arsenault, C. J.; Izquierdo, R. et Meunier, M. (1989). « Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy ». Applied Physics Letters, 55(25), pp. 2640-2642.
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http://dx.doi.org/10.1063/1.102299
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doi:10.1063/1.102299
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M. Beaudoin et al., « Interface study of hydrogenated amorphous silicon nitride on hydrogenated amorphous silicon by x-ray photoelectron spectroscopy », UQAM Archipel : articles scientifiques, ID : 10670/1.2yp9p4
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The interface between near stoichiometric hydrogenated amorphous silicon nitride (a-SiNx :H) deposited on hydrogenated amorphous silicon (a-Si:H) is studied using x-ray photoelectron spectroscopy as a function of the electron escape angle. This method allows the study of a-SiNx :H overlayers of about 40 Å thickness which is typical of the thicknesses used for well and barrier layers in superlattices and quantum well structures. Within the instrument’s resolution, subnitride components constitute less than 1% of the interface bonds. It is therefore concluded that the interface is atomically abrupt.