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2005
- handle: 10670/1.ow4gwa
- 0188-6266
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Acta Universitaria
Mots-clés
Multidisciplinarias (Ciencias Sociales) Semiconductors Shallow levels Optical refl ectanceSujets proches
Structures Edifices HallsCiter ce document
J. González-Barbosa et al., « Shallow levels characterization in epitaxial GaAs by acousto-optic reflectance », Acta Universitaria, ID : 10670/1.ow4gwa
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Résumé
"Optical spectra of light refl ection are detected under an infl uence of ultrasonic wave (UW)on a GaAs wafer. The differential spectrum is calculated as a difference between those takenunder UW and without that infl uence on a sample. This acousto-optic differential refl ectance(AODR) spectrum contains some bands that represent the energetic levels of the shallowcenters in a sample. A physical basis of this technique is related to a perturbation of localstates by UW. Here, a method is developed for characterization of local states at the surfacesand interfaces in crystals and low-dimensional epitaxial structures based on microelectronicsmaterials. A theoretical model is presented to explain AODR spectra. Also, experimentsusing epitaxial GaAs structures doped by Te were made. Finally, theoretical and experimentalresults show that acousto-optic refl ectance is an effective tool for characterization of shallowtrapping centers in epitaxial semiconductor structures."